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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION ESM101 THRU ESM106 SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Fast switching Glass passivated device ldeal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.015 gram MELF MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 .205 (5.2) .190 (4.8) SOLDERABLE ENDS .028 (.60) .018 (.46) .106 (2.7) .095 (2.4) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Volts Maximum DC Blocking Voltage Maximum Average Forward Current at TA = 55 oC Peak Forward Surge Current, IFM (surge): 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ, TSTG 15 -65 to + 175 ESM101 50 35 50 ESM102 100 70 100 ESM103 150 105 150 1.0 30 10 ESM104 200 140 200 ESM105 300 210 300 ESM106 400 280 400 UNITS Volts Volts Volts Amps Amps pF 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. @TA = 25 o C @TA =125 o C SYMBOL VF IR trr ESM101 ESM102 ESM103 0.95 ESM104 ESM105 ESM106 1.25 UNITS Volts uAmps 100 35 nSec 2001-4 5.0 RATING AND CHARACTERISTIC CURVES ( ESM101 THRU ESM106 ) AVERAGE FORWARD CURENT, (A) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE 10 NONINDUCTIVE FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE 2.0 Single Phase Half Wave 60Hz Resistive or Inductive Load trr +0.5A (V) PULSE GENERATOR (NOTE 2) (+) 25 Vdc (approx) (V) D.U.T 0 -0.25A 1.0 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+) -1.0A NOTES:1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22 pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. 0 0 25 50 75 100 125 150175 1cm SET TIME BASE FOR 5/10 ns/cm AMBIENT TEMPERATURE ( ) FIG. 3 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, (uA) 100 INSTANTANEOUS FORWARD CURRENT, (A) FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10 TJ = 150 10 TJ = 100 1.0 4 M10 SM ES M1 05 ~E 10 6 1.0 .1 ESM 101 ~ES TJ = 25 .1 TJ = 25 .01 Pulse Width = 300uS 1% Duty Cycle .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, (A) .001 0 .2 .4 .6 .8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, (pF) 70 60 50 40 TJ = 25 200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 REVERSE VOLTAGE, ( V ) 100 TJ = 25 30 20 10 0 .1 .5 12 5 10 20 50 100 200 400 NUMBER OF CYCLES AT 60Hz RECTRON |
Price & Availability of ESM106
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